PNP transistor ElecSuper MMBT2907A designed for switching and amplification in electronic applications

Key Attributes
Model Number: MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description

Product Overview

The MMBT2907A is a PNP transistor from ElecSuper, designed for general-purpose applications. It offers complementary functionality to the MMBT2222A, featuring a power dissipation of 250mW and high stability and reliability. Packaged in a SOT-23 small outline plastic package, it is suitable for various electronic circuits requiring PNP amplification or switching.

Product Attributes

  • Brand: ElecSuper
  • Product Type: PNP Transistors
  • Package: SOT-23 Small Outline Plastic
  • Encapsulation: Plastic
  • Flammability Rating: Epoxy UL: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Value Unit Notes
Absolute Maximum Ratings & Thermal Characteristics
Collector-Base Voltage VCBO -60 V Ratings at 25 ambient temperature unless otherwise specified.
Collector-Emitter Voltage VCEO -60 V Ratings at 25 ambient temperature unless otherwise specified.
Emitter-Base Voltage VEBO -5 V Ratings at 25 ambient temperature unless otherwise specified.
Collector Current-Continuous IC -600 mA Ratings at 25 ambient temperature unless otherwise specified.
Collector Power Dissipation PC 250 mW Ratings at 25 ambient temperature unless otherwise specified.
Junction Temperature Tj 150 Ratings at 25 ambient temperature unless otherwise specified.
Storage Temperature TSTG -55~150 Ratings at 25 ambient temperature unless otherwise specified.
Thermal Resistance Junction to Ambient RJA 500 /W Ratings at 25 ambient temperature unless otherwise specified.
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO -60 V IC=-100uA, IE=0
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10uA, IC=0
Collector cut-off current ICEX -50 nA VCE=-30V, VEB(off)=-0.5V
Collector cut-off current ICBO -20 nA VCB=-50V, IE=0
Emitter cut-off current IEBO -10 nA VEB=-3V, IC=0
DC current gain hFE1 75 VCE=-10V, IC=-0.1mA
DC current gain hFE2 100 VCE=-10V, IC=-1mA
DC current gain hFE3 100 VCE=-10V, IC=-10mA
DC current gain hFE4 100 VCE=-10V, IC=-150mA
DC current gain hFE5 50 300 VCE=-10V, IC=-500mA
Collector-emitter saturation voltage VCE(sat) -0.40 V IC=-150mA, IB=-15mA *Pulse test
Collector-emitter saturation voltage VCE(sat) -1.60 V IC=-500mA, IB=-50mA *Pulse test
Base-emitter saturation voltage VBE(sat) -1.30 V IC=-150mA, IB=-15mA *Pulse test
Base-emitter saturation voltage VBE(sat) -2.60 V IC=-500mA, IB=-50mA *Pulse test
Transition frequency fT 200 MHz VCE=-20V, IC=-50mA, f=100MHz
Delay time td 10 ns VCE=-30V, IC=-150mA, IB1=-15mA
Rise time tr 25 ns VCE=-30V, IC=-150mA, IB1=-15mA
Storage time ts 225 ns VCE=-6V, IC=-150mA, IB1=IB2=-15mA
Fall time tf 60 ns VCE=-6V, IC=-150mA, IB1=IB2=-15mA
hFE Classification
Rank hFE Range
L 100~200
H 200~300

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.

2410121917_ElecSuper-MMBT2907A_C5249682.pdf

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