PNP transistor ElecSuper MMBT2907A designed for switching and amplification in electronic applications
Product Overview
The MMBT2907A is a PNP transistor from ElecSuper, designed for general-purpose applications. It offers complementary functionality to the MMBT2222A, featuring a power dissipation of 250mW and high stability and reliability. Packaged in a SOT-23 small outline plastic package, it is suitable for various electronic circuits requiring PNP amplification or switching.
Product Attributes
- Brand: ElecSuper
- Product Type: PNP Transistors
- Package: SOT-23 Small Outline Plastic
- Encapsulation: Plastic
- Flammability Rating: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||
| Collector-Base Voltage | VCBO | -60 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector-Emitter Voltage | VCEO | -60 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Emitter-Base Voltage | VEBO | -5 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector Current-Continuous | IC | -600 | mA | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector Power Dissipation | PC | 250 | mW | Ratings at 25 ambient temperature unless otherwise specified. |
| Junction Temperature | Tj | 150 | Ratings at 25 ambient temperature unless otherwise specified. | |
| Storage Temperature | TSTG | -55~150 | Ratings at 25 ambient temperature unless otherwise specified. | |
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | Ratings at 25 ambient temperature unless otherwise specified. |
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100uA, IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-1mA, IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10uA, IC=0 |
| Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VEB(off)=-0.5V |
| Collector cut-off current | ICBO | -20 | nA | VCB=-50V, IE=0 |
| Emitter cut-off current | IEBO | -10 | nA | VEB=-3V, IC=0 |
| DC current gain | hFE1 | 75 | VCE=-10V, IC=-0.1mA | |
| DC current gain | hFE2 | 100 | VCE=-10V, IC=-1mA | |
| DC current gain | hFE3 | 100 | VCE=-10V, IC=-10mA | |
| DC current gain | hFE4 | 100 | VCE=-10V, IC=-150mA | |
| DC current gain | hFE5 | 50 | 300 | VCE=-10V, IC=-500mA |
| Collector-emitter saturation voltage | VCE(sat) | -0.40 | V | IC=-150mA, IB=-15mA *Pulse test |
| Collector-emitter saturation voltage | VCE(sat) | -1.60 | V | IC=-500mA, IB=-50mA *Pulse test |
| Base-emitter saturation voltage | VBE(sat) | -1.30 | V | IC=-150mA, IB=-15mA *Pulse test |
| Base-emitter saturation voltage | VBE(sat) | -2.60 | V | IC=-500mA, IB=-50mA *Pulse test |
| Transition frequency | fT | 200 | MHz | VCE=-20V, IC=-50mA, f=100MHz |
| Delay time | td | 10 | ns | VCE=-30V, IC=-150mA, IB1=-15mA |
| Rise time | tr | 25 | ns | VCE=-30V, IC=-150mA, IB1=-15mA |
| Storage time | ts | 225 | ns | VCE=-6V, IC=-150mA, IB1=IB2=-15mA |
| Fall time | tf | 60 | ns | VCE=-6V, IC=-150mA, IB1=IB2=-15mA |
| hFE Classification | ||||
| Rank | hFE Range | |||
| L | 100~200 | |||
| H | 200~300 | |||
Dimensions and Patterns (SOT-23)
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. |
|---|---|---|---|---|---|
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | |
| D | 2.800 | 3.000 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 | |
| Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm. | |||||
2410121917_ElecSuper-MMBT2907A_C5249682.pdf
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