P channel MOSFET ElecSuper AONR21357 ES designed for DC DC conversion and fast switching performance
Key Attributes
Model Number:
AONR21357-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5.8mΩ@10V;8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA;2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
370pF
Number:
1 P-Channel
Output Capacitance(Coss):
465pF
Input Capacitance(Ciss):
3.522nF
Pd - Power Dissipation:
69W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AONR21357-ES
Package:
PDFN3x3-8L
Product Description
Product Overview
The AONR21357-ES is a P-channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, providing fast switching and high cell density for low on-resistance. The device is also Avalanche Rated and features low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: AONR21357-ES
- Package: PDFN3*3-8L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 5.8 | 9 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-15A | 8 | 14 | m | |
| Forward Transconductance | gFS | VDS=-10V, ID=-20A | 50 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 3522 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 465 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 370 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID=-20A | 35 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID=-20A | 10 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID=-20A | 10.5 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V ID=-20A, RG=3 | 11 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V ID=-20A, RG=3 | 13.3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V ID=-20A, RG=3 | 74 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V ID=-20A, RG=3 | 35 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-20A | -0.45 | -1.5 | V | |
2504101957_ElecSuper-AONR21357-ES_C22379638.pdf
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