Power Switch Device SOT23 Package ElecSuper SI2302DS-T1-GE3-ES N Channel MOSFET Pb Free Halogen Free
Key Attributes
Model Number:
SI2302DS-T1-GE3-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
SI2302DS-T1-GE3-ES
Package:
SOT-23
Product Description
Product Overview
The SI2302DS-T1-GE3-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Part Number: SI2302DS-T1-GE3-ES
- Package: SOT-23
- Marking: 2302
- Material: Halogen free
- Packing: Tape & Reel
- Quantity per reel: 3,000 PCS
- Flammability Rating: UL 94V-0
- Reel Size: 7 inches
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25 | 3.3 | A | ||
| TA=100 | 2.1 | A | ||||
| Maximum Power Dissipation | PD | 0.9 | mW | |||
| Pulsed Drain Current | IDM | 13.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 138 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.7 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | 45 | 55 | mΩ | |
| VGS=2.5V, ID=2A | 62 | 85 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 200 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 35 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 28 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=2A | 3 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=2A | 0.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=2A | 0.7 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 3 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 11 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 20 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=2A, RG=3Ω | 8 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=3A | 1.5 | V | ||
2504101957_ElecSuper-SI2302DS-T1-GE3-ES_C5224184.pdf
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