Durable P Channel MOSFET ElecSuper SI2309 ES with Advanced Trench Technology and Pb Free Construction
Key Attributes
Model Number:
SI2309-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V;190mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Output Capacitance(Coss):
28pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
496pF
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
SI2309-ES
Package:
SOT-23
Product Description
Product Overview
The SI2309-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, a reliable and rugged construction, and avalanche rating. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -1.8 | A | ||
| Continuous Drain Current | ID | TA=100°C | -1.08 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | -7.2 | A | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 104 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.5A | 155 | 201 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-1A | 195 | 253 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-25V | 533 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-25V | 29 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-25V | 23 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 2 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-30V, ID= -1.5A, RG=3Ω | 45 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-30V, ID= -1.5A, RG=3Ω | 33 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-30V, ID= -1.5A, RG=3Ω | 15 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-30V, ID= -1.5A, RG=3Ω | 11 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.5A | -1.2 | V | ||
2507230935_ElecSuper-SI2309-ES_C39832213.pdf
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