High density cell design MOSFET ElecSuper ES3134KQ suitable for DC DC conversion and power switching
Key Attributes
Model Number:
ES3134KQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
880mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
220mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
33pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
ES3134KQ
Package:
SOT-323
Product Description
Product Overview
The ES3134KQ is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design for reduced on-resistance and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Product Code: ES3134KQ
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Package: SOT-323
- Marking: 34KQ
- Reel Size: 7 inches
- Quantity per reel: 3,000 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 0.88 | A | ||
| Continuous Drain Current | ID | TA=75°C | 0.68 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Pulsed Drain Current | IDM | 3.52 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 220 | 300 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=0.4A | 290 | 400 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=1.8V, ID=0.2A | 420 | 700 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 33 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 10 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 0.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.5A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.5A | 0.15 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10Ω | 4 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10Ω | 18.8 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10Ω | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10Ω | 23 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.5A | 1.5 | V | ||
2504101957_ElecSuper-ES3134KQ_C7527978.pdf
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