Fast switching complementary MOSFET ElecSuper ESD3045DN33 with low RDSON and performance in circuits
Key Attributes
Model Number:
ESD3045DN33
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
RDS(on):
18mΩ@10V;15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF;115pF
Pd - Power Dissipation:
25W;26.5W
Output Capacitance(Coss):
80pF;138pF
Input Capacitance(Ciss):
490pF;980pF
Gate Charge(Qg):
5.2nC@10V;20nC@10V
Mfr. Part #:
ESD3045DN33
Package:
PDFN-8L(5x6)
Product Description
SuperMOS PDNF5*6-8L 30V Complementary MOSFET
The ESD3045DN33 utilizes advanced trench technology MOSFETs to deliver excellent RDS(ON) and low gate charge. These complementary MOSFETs are suitable for forming level-shifted high-side switches and a wide range of other applications.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | N-channel Typ. | P-channel Typ. | Unit | ||
|---|---|---|---|---|---|
| Features | |||||
| N-channel RDS(ON) @VGS=10V | 18m | - | |||
| N-channel RDS(ON) @VGS=4.5V | 24m | - | |||
| P-channel RDS(ON) @VGS=-10V | - | 15m | |||
| P-channel RDS(ON) @VGS=-4.5V | - | 22.5m | |||
| Fast Switching | Yes | Yes | |||
| High density cell design | Yes | Yes | |||
| Reliable and rugged | Yes | Yes | |||
| Avalanche Rated | Yes | Yes | |||
| Low leakage current | Yes | Yes | |||
| Applications | |||||
| PWM applications | Yes | Yes | |||
| Load switch | Yes | Yes | |||
| Power management in portable/desktop PCs | Yes | Yes | |||
| DC/DC conversion | Yes | Yes | |||
| Absolute Maximum Ratings & Thermal Characteristics | |||||
| Drain-Source Voltage (BVDSS) | 30V | -30V | V | ||
| Gate-Source Voltage (VGS) | 20V | 20V | V | ||
| Continuous Drain Current (ID) @ TC=25C | 25A | -25A | A | ||
| Continuous Drain Current (ID) @ TC=100C | 15.8A | -15.8A | A | ||
| Maximum Power Dissipation (PD) | 25W | 26.5W | W | ||
| Pulsed Drain Current (IDM) | 100A | -100A | A | ||
| Operating Junction Temperature (TJ) | 150C | ||||
| Storage Temperature Range (Tstg) | -55 to +150C | ||||
| Electrical Characteristics (TA = 25) | |||||
| N-channel | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | - | 1.0 | - | uA |
| Gate-to-source Leakage Current (IGSS) | VDS=0V, VGS=20V | - | 100 | - | nA |
| Gate Threshold Voltage (VGS(TH)) | VGS=VDS, ID=250uA | 1.2 | 1.7 | 2.2 | V |
| Drain-to-source On-resistance (RDS(on)) | VGS=10V, ID=5A | - | 18 | 24 | m |
| Drain-to-source On-resistance (RDS(on)) | VGS=4.5V, ID=3A | - | 24 | 34 | m |
| Input Capacitance (CISS) | VGS=0V, f=1MHz, VDS=15V | - | 490 | - | pF |
| Output Capacitance (COSS) | VGS=0V, f=1MHz, VDS=15V | - | 80 | - | pF |
| Reverse Transfer Capacitance (CRSS) | VGS=0V, f=1MHz, VDS=15V | - | 60 | - | pF |
| Total Gate Charge (QG(TOT)) | VGS=10V, VDS=15V, ID=5.8A | - | 5.2 | - | nC |
| Gate-to-Source Charge (QGS) | VGS=10V, VDS=15V, ID=5.8A | - | 1.0 | - | nC |
| Gate-to-Drain Charge (QGD) | VGS=10V, VDS=15V, ID=5.8A | - | 1.3 | - | nC |
| Turn-On Delay Time (td(ON)) | VGS=10V, VDS=15V, ID=3A, RGEN=3 | - | 4.5 | - | ns |
| Rise Time (tr) | VGS=10V, VDS=15V, ID=3A, RGEN=3 | - | 2.5 | - | ns |
| Turn-Off Delay Time (td(OFF)) | VGS=10V, VDS=15V, ID=3A, RGEN=3 | - | 14.5 | - | ns |
| Fall Time (tf) | VGS=10V, VDS=15V, ID=3A, RGEN=3 | - | 3.5 | - | ns |
| Forward Voltage (VSD) | VGS=0V, IS=5.8A | - | 0.45 | 1.5 | V |
| P-channel | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VGS=0V, VDS=-30V | - | -1.0 | - | uA |
| Gate-to-source Leakage Current (IGSS) | VGS=20V, VDS=0V | - | 100 | - | nA |
| Gate Threshold Voltage (VGS(TH)) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.5 | V |
| Drain-to-source On-resistance (RDS(on)) | VGS=-10V, ID=-10A | - | 15 | 20 | m |
| Drain-to-source On-resistance (RDS(on)) | VGS=-4.5V, ID=-6A | - | 22.5 | 30 | m |
| Input Capacitance (CISS) | VGS=0V, VDS =-15V f=1MHz | - | 980 | - | pF |
| Output Capacitance (COSS) | VGS=0V, VDS =-15V f=1MHz | - | 138 | - | pF |
| Reverse Transfer Capacitance (CRSS) | VGS=0V, VDS =-15V f=1MHz | - | 115 | - | pF |
| Total Gate Charge (QG(TOT)) | VGS=-10V, VDS=-15V ID =-10A | - | 20 | - | nC |
| Gate-to-Source Charge (QGS) | VGS=-10V, VDS=-15V ID =-10A | - | 3 | - | nC |
| Gate-to-Drain Charge (QGD) | VGS=-10V, VDS=-15V ID =-10A | - | 5.5 | - | nC |
| Turn-On Delay Time (td(ON)) | VGS=-10V, VDS=-15V ID= -10A, RG=3 | - | 7.5 | - | ns |
| Rise Time (tr) | VGS=-10V, VDS=-15V ID= -10A, RG=3 | - | 16 | - | ns |
| Turn-Off Delay Time (td(OFF)) | VGS=-10V, VDS=-15V ID= -10A, RG=3 | - | 49 | - | ns |
| Fall Time (tf) | VGS=-10V, VDS=-15V ID= -10A, RG=3 | - | 32 | - | ns |
| Forward Voltage (VSD) | VGS=0V, ISD=-10A | - | -0.45 | -1.5 | V |
2504101957_ElecSuper-ESD3045DN33_C42412308.pdf
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