Low Gate Charge N Channel MOSFET ElecSuper ESN6512 Ideal for Power Switching and Charging Circuits
Key Attributes
Model Number:
ESN6512
Product Custom Attributes
Pd - Power Dissipation:
48W
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
RDS(on):
1.15mΩ@10V;1.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
1.71nF
Input Capacitance(Ciss):
4.05nF
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
ESN6512
Package:
PDFN5x6-8L
Product Description
ESN6512 N-Channel MOSFET
The ESN6512 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Part Number: ESN6512
- Material: Halogen free
- Certifications: UL 94V-0
- Product Type: Standard Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.5 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.15 | 1.5 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 1.5 | 2.2 | m | |
| Continuous Drain Current | ID | TC=25C | 120 | A | ||
| Continuous Drain Current | ID | TC=100C | 78 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 120 | W | ||
| Maximum Power Dissipation | PD | TC=100C | 48 | W | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 4050 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=10V, ID=30A | 68 | nC | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 0.45 | 1.2 | V |
2504101957_ElecSuper-ESN6512_C5350975.pdf
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