Power Switch and Charging Circuit Components Featuring ElecSuper SIS412DN T1 GE3 ES N Channel MOSFET
Key Attributes
Model Number:
SIS412DN-T1-GE3-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24.1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V;24mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Pd - Power Dissipation:
20.8W
Input Capacitance(Ciss):
512pF
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
SIS412DN-T1-GE3-ES
Package:
PDFN3x3-8L
Product Description
Product Overview
The SIS412DN-T1-GE3-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This device is Pb-free and designed for high-density cell applications.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 24.1 | A | ||
| Continuous Drain Current | ID | TC=100°C | 15.2 | A | ||
| Maximum Power Dissipation | PD | 20.8 | W | |||
| Pulsed Drain Current | IDM | 96.6 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 16 | 21 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 24 | 32 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 512 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 50 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=5.8A | 5.2 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=5.8A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=5.8A | 1.3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, ID=3A, RG=2Ω | 4.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, ID=3A, RG=2Ω | 2.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, ID=3A, RG=2Ω | 14.5 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, ID=3A, RG=2Ω | 3.4 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=5.8A | 0.8 | 1.5 | V | |
2504101957_ElecSuper-SIS412DN-T1-GE3-ES_C21713860.pdf
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