N Channel MOSFET ElecSuper NCE3400 ES designed for power switching and DC DC converter applications
Key Attributes
Model Number:
NCE3400-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
21mΩ@10V;25mΩ@4.5V;33mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
NCE3400-ES
Package:
SOT-23
Product Description
Product Overview
The NCE3400-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70°C | 4.6 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 0.9 | W | ||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 75 | 90 | °°C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 43 | 70 | °°C/W | |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.6 | 1.0 | 1.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5.8A | 21.0 | 28.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5.0A | 25.0 | 33.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=3.0A | 33.0 | 51.0 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5.8A | 7.8 | 15 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 550 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 48 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5.8A | 6.7 | nC | ||
| Threshold Gate Charge | QG(TH) | VGS=4.5V, VDS=10V, ID=5.8A | 0.75 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5.8A | 1.65 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5.8A | 1.78 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 3.8 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 13.0 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 14.2 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 2.0 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V |
2504101957_ElecSuper-NCE3400-ES_C5224191.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
