ElecSuper AON7466 ES N Channel MOSFET Suitable for DC DC Conversion and Power Switching Applications
Key Attributes
Model Number:
AON7466(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
6.5mΩ@10V;10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.35V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
876pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AON7466(ES)
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The AON7466(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: AON7466(ES)
- Package: PDFN3X3-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Origin: ElecSuper Incorporated
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Tj=25,VDD=30V, VG=10V, L=0.3mH, Rg=25 | ||||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 40 | A | ||
| TC=75C | 31 | |||||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| TC=75C | 18 | |||||
| Pulsed Drain Current | IDM | 160 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 18 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 48 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 40 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 4.2 | |||
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=18A | 6.5 | 12 | m | |
| VGS=4.5V, ID=15A | 10 | 18 | ||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.35 | 1.8 | V |
| Forward Transconductance | gFS | VDS=5.0V, ID=18A | 19 | 40 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 876 | pF | ||
| Output Capacitance | COSS | 155 | ||||
| Reverse Transfer Capacitance | CRSS | 140 | ||||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=6A | 11 | nC | ||
| Gate-to-Source Charge | QGS | 2.7 | ||||
| Gate-to-Drain Charge | QGD | 5.1 | ||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=20V, ID=6A, RG=6 | 4.7 | ns | ||
| Rise Time | tr | 35 | ||||
| Turn-Off Delay Time | td(OFF) | 35 | ||||
| Fall Time | tf | 15 | ||||
| Forward Voltage | VSD | VGS=0V, IS=1.9A | 0.7 | 1.5 | V |
2504101957_ElecSuper-AON7466-ES_C42412303.pdf
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