Low gate charge N Channel MOSFET ElecSuper EST02N10 designed for DC DC conversion and power switching
Key Attributes
Model Number:
EST02N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
206pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
EST02N10
Package:
SOT-23
Product Description
Product Overview
The EST02N10 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Series: EST02N10
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TA=25°C | - | - | 3 | A |
| Continuous Drain Current | ID | TA=100°C | - | - | 2.2 | A |
| Maximum Power Dissipation | PD | - | - | - | 3.1 | W |
| Pulsed Drain Current | IDM | - | - | - | 12 | A |
| Operating Junction Temperature | TJ | - | -55 | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | 1 | µA | |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | ±100 | nA | |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | - | 95 | 130 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=1A | - | 135 | 190 | mΩ |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | - | 200 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | - | 30 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | - | - | - | pF |
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=50V, ID=3A | - | 4 | - | nC |
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=50V, ID=3A | - | 0.9 | - | nC |
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=50V, ID=3A | - | 1.1 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | - | 13 | - | ns |
| Rise Time | tr | VGS=10V, VDD=50V, ID=3A, RG=3Ω | - | 19 | - | ns |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | - | 20 | - | ns |
| Fall Time | tf | VGS=10V, VDD=50V, ID=3A, RG=3Ω | - | 28 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=3A | - | 1.2 | - | V |
2509161644_ElecSuper-EST02N10_C41365195.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
