N Channel MOSFET ElecSuper AON7264E ES PDFN3 3 8L Package Suitable for DC DC Conversion Power Switch
Key Attributes
Model Number:
AON7264E(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
RDS(on):
11.3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
167pF
Output Capacitance(Coss):
198pF
Input Capacitance(Ciss):
3.034nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
AON7264E(ES)
Package:
PDFN3x3-8L
Product Description
Product Overview
The AON7264E(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: AON7264E(ES)
- Package: PDFN3*3-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 55 | A | ||
| Continuous Drain Current | ID | TC=100C | 33 | A | ||
| Maximum Power Dissipation | PD | 48 | W | |||
| Pulsed Drain Current | IDM | 220 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 20 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 100 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 2.6 | /W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 7 | 9.1 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 8.7 | 11.3 | m | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3034 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 198 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 167 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=30A | 77 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=30V, ID=30A | 14 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=30V, ID=30A | 15 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=30A, RG=1.8 | 13 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=30A, RG=1.8 | 77 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=30A, RG=1.8 | 50 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=30A, RG=1.8 | 106 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.2 | V | ||
2504101957_ElecSuper-AON7264E-ES_C42434102.pdf
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