P Channel MOSFET ElecSuper AOD403 Featuring Trench Technology and Low Gate Charge for DC DC Conversion
Key Attributes
Model Number:
AOD403
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
62A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V;11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
470pF
Number:
1 P-Channel
Output Capacitance(Coss):
585pF
Input Capacitance(Ciss):
2.89nF
Pd - Power Dissipation:
79W
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
AOD403
Package:
TO-252
Product Description
Product Overview
The AOD403 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Package: TO-252
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Conditions | Typical | Maximum | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | |||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | ||
| Continuous Drain Current | ID | TC=25°C | -62 | A | |
| Continuous Drain Current | ID | TC=75°C | -48 | A | |
| Maximum Power Dissipation | PD | TC=25°C | 79 | W | |
| Maximum Power Dissipation | PD | TC=75°C | 47 | W | |
| Pulsed Drain Current | IDM | -200 | A | ||
| Avalanche Current, Single Pulsed | IAS | EAS conditionTj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | -24 | A | |
| Avalanche Energy, Single Pulsed | EAS | EAS conditionTj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | 86.4 | mJ | |
| Operating Junction Temperature | TJ | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s, Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper | 16 | 20 | °C/W |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 0.9 | 1.6 | °C/W |
| Electrical Characteristics | |||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±25V | ±100 | nA | |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.5 | -2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 8 | 12 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-20A | 11.5 | 18 | mΩ |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-20A | 80 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 2890 | 3500 | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 585 | 760 | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 470 | 660 | pF |
| Gate Resistance | Rg | f=1MHz | 3.8 | 5.7 | Ω |
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-20A | 51 | 61 | nC |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-20A | 12 | 14 | nC |
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-20A | 16 | 22 | nC |
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 16 | ns | |
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 12 | ns | |
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 45 | ns | |
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 22 | ns | |
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -1.5 | V | |
2504101957_ElecSuper-AOD403_C5224305.pdf
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