P Channel MOSFET ElecSuper ESN7409 suitable for DC DC conversion power switch and charging circuits
Key Attributes
Model Number:
ESN7409
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
36.7A
RDS(on):
9mΩ@10V;12.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
29.76W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
ESN7409
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN7409 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Code: ESN7409
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel (5,000 PCS per reel)
- Reel Size: 13 inches
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC=25°C | -36.70 | A | ||
| Continuous Drain Current | ID | TC=75°C | -28.43 | A | ||
| Pulsed Drain Current | IDM | a | -146.79 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 40 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 4.2 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±25V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.4 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 9.0 | 13 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 12.5 | 18 | mΩ | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-6A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-15V | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-15V | 200 | pF | ||
| Gate Resistance | Rg | f=1MHz | 2.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-20A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-20A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-20A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 27 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 68 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 39 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.75 | -1.5 | V | |
2504101957_ElecSuper-ESN7409_C5140349.pdf
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