charging circuit MOSFET ElecSuper ESD3066DN33 N Channel with low gate charge and halogen free design
Key Attributes
Model Number:
ESD3066DN33
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
45A
RDS(on):
4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
275pF
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
ESD3066DN33
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The ESD3066DN33 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for DC-DC conversion, power switching, and charging circuits, offering high density cell design, a reliable and rugged construction, and avalanche rating. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 45 | A | ||
| Continuous Drain Current | ID | TC=75°C | 35 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 18 | W | ||
| Pulsed Drain Current | IDM | a | 180 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 30 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 135 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 40 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 4.2 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.75 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 4.0 | 7.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=16A | 6.5 | 9.5 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=10A | 25 | 40 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =25V | 2200 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =25V | 275 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =25V | 242 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=24V, ID=30A | 48 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=24V, ID=30A | 8.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=24V, ID=30A | 10.0 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 12.5 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 90 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 142 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 85 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | |
2504101957_ElecSuper-ESD3066DN33_C42385166.pdf
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