power switch MOSFET ElecSuper DMN10H220LE-13-ES with low RDS ON and advanced trench technology design
Key Attributes
Model Number:
DMN10H220LE-13-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V;130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
3.1W
Mfr. Part #:
DMN10H220LE-13-ES
Package:
SOT-223
Product Description
Product Overview
The DMN10H220LE-13-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: SuperMOS
- Part Number: DMN10H220LE-13-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel (2,500 PCS per reel)
- Color: NG10R150 (Marking)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TA=25°C | - | - | 4 | A |
| Continuous Drain Current | ID | TA=100°C | - | - | 2.3 | A |
| Maximum Power Dissipation | PD | - | - | - | 3.1 | W |
| Pulsed Drain Current | IDM | - | - | - | 16 | A |
| Avalanche Current, Single Pulsed | IAS | a | - | - | 9 | A |
| Avalanche Energy, Single Pulsed | EAS | a | - | - | 12 | mJ |
| Operating Junction Temperature | TJ | - | - | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | - | 40 | - | °C/W |
| Electrical Characteristics (At TA = 25°C unless otherwise specified) | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | 1 | - | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.7 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=4A | - | 120 | 150 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | - | 130 | 180 | mΩ |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | - | 650 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | - | 30 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | - | 25 | - | pF |
| Forward Voltage | VSD | VGS=0V, IS=4A | - | 1.5 | - | V |
2504101957_ElecSuper-DMN10H220LE-13-ES_C22464634.pdf
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