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quality Power Conversion MOSFET ElecSuper AO4485 P Channel Type with Low Gate Charge and Fast Switching Speed factory
quality Power Conversion MOSFET ElecSuper AO4485 P Channel Type with Low Gate Charge and Fast Switching Speed factory

Power Conversion MOSFET ElecSuper AO4485 P Channel Type with Low Gate Charge and Fast Switching Speed

Key Attributes
Model Number: AO4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
11A
RDS(on):
13mΩ@10V;17mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Output Capacitance(Coss):
260pF
Pd - Power Dissipation:
3.2W
Input Capacitance(Ciss):
2.5nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
AO4485
Package:
SOP8
Product Description

AO4485 SuperMOS - SOP8 P-channel MOSFET

The AO4485 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. Its high-density cell design ensures low RDS(on), and it is designed for fast switching and reliable operation.

Product Attributes

  • Brand: ElecSuper
  • Product Line: SuperMOS
  • Package: SOP8
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Certifications: 100% UIS TESTED!
  • Origin: www.elecsuper.com

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage BVDSS VGS=0V, ID=-250uA -40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TA=25C 11 A
Continuous Drain Current ID TA=75C 8.8 A
Maximum Power Dissipation PD TA=25C 3.2 W
Maximum Power Dissipation PD TA=75C 1.9 W
Pulsed Drain Current IDM 44 A
Avalanche Current, Single Pulsed IAS Tj=25, VDD=-30V, VG=-10V, L=0.3mH, Rg=25 -29 A
Avalanche Energy, Single Pulsed EAS Tj=25, VDD=-30V, VG=-10V, L=0.3mH, Rg=25 126 mJ
Operating Junction Temperature TJ 150 C
Storage Temperature Range Tstg -55 +150 C
Electrical Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -40 V
Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=-40V -1 uA
Gate-to-source Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=-250uA -1.0 -1.6 -2.0 V
Drain-to-source On-resistance RDS(on) VGS=-10V, ID=-10A 13 16 m
Drain-to-source On-resistance RDS(on) VGS=-4.5V, ID=-8A 17 20 m
Input Capacitance CISS VGS=0V, VDS =-20V, f=1MHz 2500 pF
Output Capacitance COSS VGS=0V, VDS =-20V, f=1MHz 260 pF
Reverse Transfer Capacitance CRSS VGS=0V, VDS =-20V, f=1MHz 180 pF
Total Gate Charge QG(TOT) VGS=-10V, VDS=-20V, ID=-10A 42 nC
Gate-to-Source Charge QGS VGS=-10V, VDS=-20V, ID=-10A 7 nC
Gate-to-Drain Charge QGD VGS=-10V, VDS=-20V, ID=-10A 8.8 nC
Turn-On Delay Time td(ON) VGS=-10V, VDS=-20V, RL=1, RG=3 10 ns
Rise Time tr VGS=-10V, VDS=-20V, RL=1, RG=3 20 ns
Turn-Off Delay Time td(OFF) VGS=-10V, VDS=-20V, RL=1, RG=3 55 ns
Fall Time tf VGS=-10V, VDS=-20V, RL=1, RG=3 30 ns
Forward Voltage VSD VGS=0V, ISD=-10A -1.5 V

2504101957_ElecSuper-AO4485_C5334068.pdf
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