P Channel MOSFET ElecSuper ESPM3021 8 TR designed for DC DC conversion and power switching solutions
Key Attributes
Model Number:
ESPM3021-8/TR
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
9.5mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF@15V
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.78nF@15V
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
ESPM3021-8/TR
Package:
SOP-8
Product Description
Product Overview
The ESPM3021-8/TR is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS
- Part Number: ESPM3021-8/TR
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: www.elecsuper.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -12 | A | ||
| Continuous Drain Current | ID | TA=100°C | -10 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=100°C | 2.0 | W | ||
| Pulsed Drain Current | IDM | -60 | A | |||
| Avalanche Current, Single Pulsed | IAS | EAS condition£¯Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω | -22 | A | ||
| Avalanche Energy, Single Pulsed | EAS | EAS condition£¯Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω | 72 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1 | -1.5 | -2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 9.5 | 13 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 14 | 17 | mΩ | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-10A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =-15V | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =-15V | 200 | pF | ||
| Gate Resistance | Rg | f=1MHz | 6.0 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-15A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-15A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-15A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 27 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 68 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 39 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1 | V | |
2504101957_ElecSuper-ESPM3021-8-TR_C42412331.pdf
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