P Channel MOSFET ElecSuper IRLML6402TRPBF ES Designed for DC DC Conversion and Power Switch Circuits
Key Attributes
Model Number:
IRLML6402TRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
RDS(on):
36mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 P-Channel
Input Capacitance(Ciss):
430pF
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
IRLML6402TRPBF-ES
Package:
SOT-23
Product Description
Product Overview
The IRLML6402TRPBF-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25C | -3.3 | A | ||
| Continuous Drain Current | ID | TA=100C | -2.1 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 0.9 | W | ||
| Pulsed Drain Current | IDM | -13.4 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | (t ≤10s) | 139 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2A | 36 | 47 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-1.5A | 50 | 63 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-1A | 72 | 90 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 430 | pF | ||
| Output Capacitance | COSS | 65 | pF | |||
| Reverse Transfer Capacitance | CRSS | 52 | pF | |||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-10V ID =-2A | 4.3 | nC | ||
| Gate-to-Source Charge | QGS | 0.8 | nC | |||
| Gate-to-Drain Charge | QGD | 1.1 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V ID=-2A, RG=3Ω | 12 | ns | ||
| Rise Time | tr | 55 | ns | |||
| Turn-Off Delay Time | td(OFF) | 15 | ns | |||
| Fall Time | tf | 9 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=-2A | -1.5 | V | ||
2504101957_ElecSuper-IRLML6402TRPBF-ES_C22379632.pdf
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