Low Gate Charge N Channel MOSFET ElecSuper ESA50N03BD Designed for Power Switch and Charging Circuits
Key Attributes
Model Number:
ESA50N03BD
Product Custom Attributes
Pd - Power Dissipation:
42W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
65A
RDS(on):
4mΩ@10V;6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
444pF
Input Capacitance(Ciss):
1.036nF
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
ESA50N03BD
Package:
TO-252
Product Description
Product Overview
The ESA50N03BD is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Part Number: ESA50N03BD
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Absolute Maximum Rating & Thermal Characteristics | ||||
| Drain-Source Voltage | BVDSS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 65 | A | TC=25°C |
| Continuous Drain Current | ID | 50 | A | TC=75°C |
| Maximum Power Dissipation | PD | 42 | W | TC=25°C |
| Maximum Power Dissipation | PD | 25 | W | TC=75°C |
| Pulsed Drain Current | IDM | 260 | A | a |
| Avalanche Current, Single Pulsed | IAS | 32 | A | b |
| Avalanche Energy, Single Pulsed | EAS | 153 | mJ | b |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 3 | °C/W | t ≤ 10 s |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | uA | VDS=30V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 4.0 | mΩ | VGS=10V, ID=20A |
| Drain-to-source On-resistance | RDS(on) | 6.0 | mΩ | VGS=4.5V, ID=20A |
| Forward Transconductance | gFS | 60 | S | VDS=5.0V, ID=20A |
| Input Capacitance | CISS | 1036 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 444 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 62 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 15.8 | nC | VGS=10V, VDS=15V, ID=20A |
| Gate-to-Source Charge | QGS | 3.3 | nC | VGS=10V, VDS=15V, ID=20A |
| Gate-to-Drain Charge | QGD | 3.6 | nC | VGS=10V, VDS=15V, ID=20A |
| Turn-On Delay Time | td(ON) | 5.5 | ns | VGS=10V, VDS=15V, RG=0.75Ω |
| Rise Time | tr | 3.3 | ns | VGS=10V, VDS=15V, RG=1.8Ω |
| Turn-Off Delay Time | td(OFF) | 18 | ns | VGS=10V, VDS=15V, RG=0.75Ω |
| Fall Time | tf | 4.3 | ns | VGS=10V, VDS=15V, RG=1.8Ω |
| Forward Voltage | VSD | 0.75 - 1.5 | V | VGS=0V, IS=1.0A |
2504101957_ElecSuper-ESA50N03BD_C42385169.pdf
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