P Channel MOSFET ElecSuper SI7617DN ES Designed for Power Switching and Charging Circuit Efficiency
Key Attributes
Model Number:
SI7617DN(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
39A
RDS(on):
8mΩ@10V;11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
SI7617DN(ES)
Package:
PDFN-8L(3x3)
Product Description
SI7617DN(ES) P-Channel MOSFET
The SI7617DN(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS PDFN3*3-8L
- Part Number: SI7617DN(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | 25 | V | |||
| Continuous Drain Current | ID | TC=25C | -39 | A | ||
| Continuous Drain Current | ID | TC=75C | -30 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 17.8 | W | ||
| Pulsed Drain Current | IDM | -156 | A | |||
| Avalanche Current, Single Pulsed | IAS | -25 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 93.7 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=25V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.4 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 8 | 13 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 11.5 | 18 | m | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-6A | 24 | 40 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =-15V | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =-15V | 200 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 2.5 | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-20A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID =-20A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID =-20A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1, RG=3 | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1, RG=3 | 27 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1, RG=3 | 68 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1, RG=3 | 39 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.75 | -1.5 | V | |
2504101957_ElecSuper-SI7617DN-ES_C42412335.pdf
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