High Reliability ElecSuper ESD407 P Channel MOSFET Suitable for DC DC Conversion and Power Switching
Key Attributes
Model Number:
ESD407
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
RDS(on):
88mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
25W
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
ESD407
Package:
TO-252
Product Description
Product Overview
The ESD407 is a P-Channel enhancement MOS Field Effect Transistor featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
- Ordering Information: ESD407
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| IDSS | VDS=-60V, VGS=0V | -1 | uA | |||
| IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| BVDSS | VGS=0V, ID=-250uA | -60 | V | |||
| ON CHARACTERISTICS | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | VGS=-10V, ID=-12A | 88 | 117 | m | ||
| RDS(on) | VGS=-4.5V, ID=-8A | 92 | 127 | m | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-12A | 13 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | CISS | VGS=0V VDS =-30V f=1MHz | 990 | pF | ||
| COSS | VGS=0V VDS =-30V f=1MHz | 115 | pF | |||
| CRSS | VGS=0V VDS =-30V f=1MHz | 45 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-30V ID =-12A | 15.8 | nC | ||
| QGS | VGS=-10V VDS=-30V ID =-12A | 3 | ||||
| Gate-to-Drain Charge | QGD | VGS=-10V VDS=-30V ID =-12A | 3.5 | |||
| SWITCHING CHARACTERISTICS | td(ON) | VGS=-10V, VDS=-30V, RL=2.5, RG=3 | 9 | ns | ||
| tr | VGS=-10V, VDS=-30V, RL=2.5, RG=3 | 10 | ns | |||
| td(OFF) | VGS=-10V, VDS=-30V, RL=2.5, RG=3 | 25 | ns | |||
| tf | VGS=-10V, VDS=-30V, RL=2.5, RG=3 | 11 | ns | |||
| BODY DIODE CHARACTERISTICS | VSD | VGS=0V, IS=-1.0A | -1.5 | V | ||
| Avalanche current single pulse | IAS | RG=25, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25 | -15 | A | ||
| Avalanche energy single pulse | EAS | RG=25, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25 | 29 | mJ | ||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 2.5 | 3 | C/W | |
| Continuous Drain Current | ID | TC=25C | -14 | A | ||
| Continuous Drain Current | ID | TC=75C | -10 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 42 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 25 | W | ||
| Pulsed Drain Current | IDM | -56 | A | |||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C |
2504101957_ElecSuper-ESD407_C5350983.pdf
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