Power Switching and Charging Circuits with ElecSuper AO4842 N Channel MOSFET Low Gate Charge Design
Key Attributes
Model Number:
AO4842
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V;25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
2 N-Channel
Output Capacitance(Coss):
67pF
Input Capacitance(Ciss):
373pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
AO4842
Package:
SOP8
Product Description
AO4842 SuperMOS N-Channel MOSFET
The AO4842 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25℃ | 7.7 | A | ||
| Continuous Drain Current | ID | TA=75℃ | 5.8 | A | ||
| Maximum Power Dissipation | PD | TA=25℃ | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75℃ | 1.2 | W | ||
| Avalanche Current, Single Pulsed | IAS | EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.3mH,Rg=25ℂ | 11 | A | ||
| Avalanche Energy, Single Pulsed | EAS | EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.3mH,Rg=25ℂ | 18 | mJ | ||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Lead Temperature | TL | 260 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=7.7A | 16 | 23 | mℂ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 25 | 37 | mℂ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=7.7A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =15V | 373 | 448 | pF | |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =15V | 67 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =15V | 41 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=7.7A | 7.2 | 11 | nC | |
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=15V, ID=7.7A | 14.9 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=15V, ID=7.7A | 2.9 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.95ℂ, RGEN=3ℂ | 4.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.95ℂ, RGEN=3ℂ | 2.7 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.95ℂ, RGEN=3ℂ | 14.9 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.95ℂ, RGEN=3ℂ | 2.9 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-AO4842_C5224314.pdf
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