Power Switching MOSFET ElecSuper ES138KW N Channel Device with Trench Technology and Low Gate Charge
Key Attributes
Model Number:
ES138KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.8Ω@10V,0.3A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
1.3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
15pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.6nC@4.5V
Mfr. Part #:
ES138KW
Package:
SOT-523
Product Description
Product Overview
The ES138KW is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | @TA=25 | 0.25 | A | ||
| Maximum Power Dissipation | PD | @TA=25 | 150 | mW | ||
| Pulsed Drain Current | IDM | a | 1.0 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V,TJ=25°C | 1.0 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V, TJ=125°C | 100 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.25A | 1.5 | 1.9 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 1.6 | 2.5 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=0.1A | 2.7 | 4.5 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =25V | 25 | 50 | pF | |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =25V | 9.7 | 22 | pF | |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =25V | 2.2 | 5 | pF | |
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=25V, ID=0.25A | 0.65 | 1 | nC | |
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=25V, ID=0.25A | 0.2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=25V, ID=0.25A | 0.23 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=25V, ID=0.25A, RG=6Ω | 2.3 | 5 | ns | |
| Rise Time | tr | VGS=10V, VDS=25V, ID=0.25A, RG=6Ω | 19.2 | 40 | ns | |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=25V, ID=0.25A, RG=6Ω | 6.3 | 12 | ns | |
| Fall Time | tf | VGS=10V, VDS=25V, ID=0.25A, RG=6Ω | 23 | 50 | ns | |
| Forward Voltage | VSD | VGS=0V, IS=0.25A | 0.86 | 1.5 | V | |
2504101957_ElecSuper-ES138KW_C5224286.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
