Power Switching Solution ElecSuper 2N7002DW N Channel MOSFET with Excellent RDS ON and ESD Protection
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.85Ω@10V;2.05Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@25V
Number:
2 N-Channel
Input Capacitance(Ciss):
28pF@0V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.8nC@4.5V
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design and ESD protection. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: SuperMOS
- Model: 2N7002DW
- Package: SOT-363
- Marking: 72KZ
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 60 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TA=25°C | - | - | 0.3 | A |
| Continuous Drain Current | ID | TA=100°C | - | - | 0.2 | A |
| Maximum Power Dissipation | PD | - | - | - | 350 | mW |
| Pulsed Drain Current | IDM | - | - | - | 1.2 | A |
| Operating Junction Temperature | TJ | - | - | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | - | 357 | - | °C/W |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1.0 | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±10 | uA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | - | 1.85 | 2.2 | Ω |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | - | 2.05 | 3.0 | Ω |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | - | 28 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | - | 11 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | - | 4 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.3A | - | 1.8 | - | nC |
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.3A | - | 0.3 | - | nC |
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.3A | - | 0.6 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | - | 2 | - | ns |
| Rise Time | tr | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | - | 15 | - | ns |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | - | 7 | - | ns |
| Fall Time | tf | VGS=10V, VDS=10V, ID=0.2A, RG=10Ω | - | 20 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=0.3A | - | - | 1.5 | V |
2504101957_ElecSuper-2N7002DW_C5224248.pdf
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