P Channel MOSFET ElecSuper AON7407 ES suitable for power switching and DC DC conversion applications
Key Attributes
Model Number:
AON7407-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
440pF
Number:
1 P-Channel
Output Capacitance(Coss):
540pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
3.5nF
Gate Charge(Qg):
45nC@4.5V
Mfr. Part #:
AON7407-ES
Package:
PDFN3x3-8L
Product Description
Product Overview
The AON7407-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TC=25°C | -42 | A | ||
| TC=75°C | -32 | A | ||||
| Maximum Power Dissipation | PD | TC=25°C | 30 | W | ||
| TC=75°C | 18 | W | ||||
| Pulsed Drain Current | IDM | -160 | A | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-20V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±12V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.65 | -0.90 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-14A | 8 | 12 | mΩ | |
| VGS=-2.5V, ID=-13A | 11 | 16 | mΩ | |||
| Forward Transconductance | gFS | VDS=-5V, ID=-14A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-10V, f=1MHz | 3500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-10V, f=1MHz | 540 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-10V, f=1MHz | 440 | pF | ||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V, ID=-14A | 45 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V, ID=-14A | 10 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V, ID=-14A | 11 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, RL=0.75Ω, RG=3Ω | 18 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V, RL=0.75Ω, RG=3Ω | 32 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V, RL=0.75Ω, RG=3Ω | 136 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V, RL=0.75Ω, RG=3Ω | 56 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1.2 | V | |
2504101957_ElecSuper-AON7407-ES_C19725104.pdf
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