ElecSuper AO4409 ES P channel MOSFET offering low resistance and fast switching for DC DC conversion
Key Attributes
Model Number:
AO4409-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6.8mΩ@10V;9.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
358pF
Number:
1 P-Channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AO4409-ES
Package:
SOP8
Product Description
Product Overview
The AO4409-ES is a P-channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, providing fast switching, high cell density for low resistance, and a reliable, rugged design.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Pb-free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.7 | -2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 6.8 | 9 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-10A | 9.5 | 14 | m | |
| Forward Transconductance | gFS | VDS=-10V, ID=-10A | 50 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 3100 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 430 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 358 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID=-12A | 35 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID=-12A | 10 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID=-12A | 10.5 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V ID=-12A, RG=3 | 11 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V ID=-12A, RG=3 | 13.3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V ID=-12A, RG=3 | 74 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V ID=-12A, RG=3 | 35 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-10A | -0.45 | -1.5 | V | |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -14 | A | ||
| Continuous Drain Current | ID | TA=100C | -8.8 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 3 | W | ||
| Maximum Power Dissipation | PD | TA=100C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -53 | A | |||
| Single Pulse Avalanche Current | IAS | -40 | A | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | 41.6 | /W | |||
2504101957_ElecSuper-AO4409-ES_C21713852.pdf
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