rugged P channel MOSFET ElecSuper IRFR5305TRPBF ES suitable for DC DC conversion and power switches
Key Attributes
Model Number:
IRFR5305TRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V;25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Output Capacitance(Coss):
166pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
4.295nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
IRFR5305TRPBF-ES
Package:
TO-252
Product Description
Product Overview
The IRFR5305TRPBF-ES is a P-channel MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Code: IRFR5305TRPBF-ES
- Package: TO-252
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free, 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Typical | Maximum | Unit | Conditions |
| Drain-Source Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | |
| Gate-Source Voltage | VGS | ±20 | V | ||
| Continuous Drain Current | ID | -25 / -16 | A | TC=25°C / TC=100°C | |
| Maximum Power Dissipation | PD | 30 | W | TC=25°C | |
| Pulsed Drain Current | IDM | -100 | A | ||
| Single Pulse Avalanche Current | IAS | -24 | A | VDD= -25V, VGS= -10V, L= 0.4mH, TJ=25°C | |
| Single Pulse Avalanche Energy | EAS | 115.2 | mJ | VDD= -25V, VGS= -10V, L= 0.4mH, TJ=25°C | |
| Operating Junction Temperature | TJ | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 4.16 | °C/W | (t ≤ 10s) | |
| Junction-to-Ambient Thermal Resistance | RθJA | 72 | °C/W | ||
| Drain-to-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VGS=0V, VDS=-60V | |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VGS=±20V, VDS=0V | |
| Gate Threshold Voltage | VGS(TH) | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance | RDS(on) | 22 / 25 | 29 / 35 | mΩ | VGS=-10V, ID=-10A / VGS=-4.5V, ID=-5A |
| Forward Transconductance | gFS | 60 | S | VDS=-10V, ID=-10A | |
| Input Capacitance | CISS | 4295 | pF | VGS=0V, VDS =-30V, f=1MHz | |
| Output Capacitance | COSS | 166 | pF | VGS=0V, VDS =-30V, f=1MHz | |
| Reverse Transfer Capacitance | CRSS | 140 | pF | VGS=0V, VDS =-30V, f=1MHz | |
| Total Gate Charge | QG(TOT) | 75 | nC | VGS=-10V, VDS=-30V, ID=-10A | |
| Gate-to-Source Charge | QGS | 7.7 | VGS=-10V, VDS=-30V, ID=-10A | ||
| Gate-to-Drain Charge | QGD | 8.8 | VGS=-10V, VDS=-30V, ID=-10A | ||
| Turn-On Delay Time | td(ON) | 22 | ns | VGS=-10V, VDS=-30V, ID=-10A, RG=3Ω | |
| Rise Time | tr | 25 | ns | VGS=-10V, VDS=-30V, ID=-10A, RG=3Ω | |
| Turn-Off Delay Time | td(OFF) | 86 | ns | VGS=-10V, VDS=-30V, ID=-10A, RG=3Ω | |
| Fall Time | tf | 30 | ns | VGS=-10V, VDS=-30V, ID=-10A, RG=3Ω | |
| Forward Voltage | VSD | -1.5 | -4.5 | V | VGS=0V, ISD=-10A |
2504101957_ElecSuper-IRFR5305TRPBF-ES_C41365208.pdf
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