High current P channel trench MOSFET FETek FKD4115 ideal for synchronous buck converter power stages
Key Attributes
Model Number:
FKD4115
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
52A
RDS(on):
13mΩ@4.5V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
222pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.5nF@15V
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
27.9nC@4.5V
Mfr. Part #:
FKD4115
Package:
TO-252
Product Description
Product Overview
The FKD4115 is a P-channel Trench MOSFET designed for high-performance synchronous buck converter applications. It features excellent RDS(ON) and low gate charge, making it ideal for efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: P-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units | |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -52 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -32 | A | ||||
| IDM | Pulsed Drain Current | -105 | A | ||||
| Thermal Data | PD@TC=25 | Total Power Dissipation | 52.1 | W | |||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-18A | 10.5 | 13 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | 1 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | |||
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | 27.9 | nC | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3500 | pF | |||
| Coss | Output Capacitance | VDS=-15V , VGS=0V , f=1MHz | 323 | pF | |||
| Diode Characteristics | IS | Continuous Source Current | VG=VD=0V , Force Current | -52 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1 | V |
2411220045_FETek-FKD4115_C5361880.pdf
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