Low RDS ON N Channel MOSFET ElecSuper IPT015N10N5 ES Ideal for DC DC Conversion and High Density Cell
Key Attributes
Model Number:
IPT015N10N5(ES)
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
430A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.07mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
79pF
Output Capacitance(Coss):
3.509nF
Pd - Power Dissipation:
463W
Input Capacitance(Ciss):
9.08nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
IPT015N10N5(ES)
Package:
TOLL-8L
Product Description
Product Overview
The IPT015N10N5(ES) is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and designed for high density cell applications, providing reliable and rugged performance with avalanche rating and low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Model: IPT015N10N5(ES)
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
| OFF CHARACTERISTICS | BVDSS | VGS=0V, ID=250uA | 100 | V | |||
| IDSS | VDS=100V, VGS=0V | 1.0 | uA | ||||
| IGSS | VDS=0V, VGS=20V | 100 | nA | ||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 2.4 | 3 | 3.6 | V | |
| ON CHARACTERISTICS | RDS(on) | VGS=10V, ID=30A | 1.07 | 1.4 | m | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | CISS | VGS=0V, f=100KHz, VDS=50V | 9080 | pF | |||
| COSS | 3509 | pF | |||||
| CRSS | 79 | pF | |||||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=50V, ID=100A | 160 | nC | |||
| Gate-to-Source Charge | QGS | 55 | nC | ||||
| Gate-to-Drain Charge | QGD | 38 | nC | ||||
| SWITCHING CHARACTERISTICS | Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=100A, RG=3 | 30 | ns | ||
| Rise Time | tr | 80 | ns | ||||
| Turn-Off Delay Time | td(OFF) | 82 | ns | ||||
| Fall Time | tf | 95 | ns | ||||
| BODY DIODE CHARACTERISTICS | Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | BVDSS | 100 | V | ||||
| VGS | 20 | V | |||||
| ID | TC=25C | 430 | A | ||||
| ID | TC=100C | 258 | A | ||||
| PD | TC=25C | 463 | W | ||||
| IDM | 1720 | A | |||||
| EAS | a | 1106 | mJ | ||||
| TJ | -55 | 150 | C | ||||
| TL | 260 | C | |||||
| Tstg | -55 | 150 | C | ||||
| Junction-to-Case Thermal Resistance | RJC | Single Operation | 0.27 | C/W | |||
2506121200_ElecSuper-IPT015N10N5-ES_C49108770.pdf
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