ElecSuper AO4614B ES complementary MOSFET with fast switching capabilities and high density cell design
Key Attributes
Model Number:
AO4614B(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6.8A;5A
RDS(on):
20mΩ@10V;38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA;1.55V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF;65pF
Output Capacitance(Coss):
100pF;140pF
Input Capacitance(Ciss):
410pF;660pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.5nC@10V;13.5nC@10V
Mfr. Part #:
AO4614B(ES)
Package:
SOP-8
Product Description
Product Overview
The AO4614B(ES) is a complementary MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for level-shifted high-side switching and various other applications. Key features include N-channel and P-channel MOSFETs with specified voltage and resistance ratings, fast switching capabilities, high-density cell design, and a halogen-free material composition. Applications include PWM, load switching, power management in PCs, and DC/DC conversion. The device is 100% UIS tested.
Product Attributes
- Brand: ElecSuper
- Model: AO4614B(ES)
- Package: SOP8
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | N-channel Typical | N-channel Maximum | P-channel Typical | P-channel Maximum | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 40 | -40 | V | ||
| Gate-Source Voltage | VGS | ±20 | ±20 | V | ||
| Continuous Drain Current (TA=25°C) | ID | 6.8 | -5.0 | A | ||
| Continuous Drain Current (TA=75°C) | ID | 5.2 | -3.9 | A | ||
| Maximum Power Dissipation (TA=25°C) | PD | 2 | 2 | W | ||
| Maximum Power Dissipation (TA=75°C) | PD | 1.2 | 1.2 | W | ||
| Pulsed Drain Current | IDM | 27.2 | -20 | A | ||
| Avalanche Current, Single Pulsed | IAS | 11 a | -16.5 b | A | ||
| Avalanche Energy, Single Pulsed | EAS | 18 a | 40 b | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| N-channel Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | |||
| Zero Gate Voltage Drain Current | IDSS | 1.0 | uA | |||
| Gate-to-source Leakage Current | IGSS | ±100 | nA | |||
| Gate Threshold Voltage | VGS(TH) | 1.0 | 2.2 | V | ||
| Drain-to-source On-resistance | RDS(on) | 20 | 25 | mΩ | ||
| Forward Trans conductance | gFS | 40 | S | |||
| Input Capacitance | CISS | 410 | pF | |||
| Output Capacitance | COSS | 100 | pF | |||
| Reverse Transfer Capacitance | CRSS | 35 | pF | |||
| Total Gate Charge | QG(TOT) | 8.5 | nC | |||
| Gate-to-Source Charge | QGS | 1.2 | nC | |||
| Gate-to-Drain Charge | QGD | 2.4 | nC | |||
| Turn-On Delay Time | td(ON) | 4.4 | ns | |||
| Rise Time | tr | 3.3 | ns | |||
| Turn-Off Delay Time | td(OFF) | 15.8 | ns | |||
| Fall Time | tf | 3.2 | ns | |||
| Forward Voltage | VSD | 0.45 | 1.5 | V | ||
| P-channel Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | -40 | V | |||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | |||
| Gate-to-source Leakage Current | IGSS | ±1 | uA | |||
| Gate Threshold Voltage | VGS(TH) | -1.0 | -2.5 | V | ||
| Drain-to-source On-resistance | RDS(on) | 38 | 52 | mΩ | ||
| Forward Transconductance | gFS | 40 | S | |||
| Input Capacitance | CISS | 660 | pF | |||
| Output Capacitance | COSS | 140 | pF | |||
| Reverse Transfer Capacitance | CRSS | 65 | pF | |||
| Total Gate Charge | QG(TOT) | 13.5 | nC | |||
| Gate-to-Source Charge | QGS | 2 | nC | |||
| Gate-to-Drain Charge | QGD | 4 | nC | |||
| Turn-On Delay Time | td(ON) | 7.5 | ns | |||
| Rise Time | tr | 6.6 | ns | |||
| Turn-Off Delay Time | td(OFF) | 26 | ns | |||
| Fall Time | tf | 11.5 | ns | |||
| Forward Voltage | VSD | -4.5 | -1.5 | V | ||
2504101957_ElecSuper-AO4614B-ES_C42412250.pdf
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