Durable P channel MOSFET ElecSuper ESJ2303 featuring trench technology and avalanche rating for PWM
Key Attributes
Model Number:
ESJ2303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.5A
RDS(on):
155mΩ@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Reverse Transfer Capacitance (Crss@Vds):
13pF@15V
Input Capacitance(Ciss):
95pF@15V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
1.6nC@10V
Mfr. Part #:
ESJ2303
Package:
SOT-23
Product Description
Product Overview
The ESJ2303 is a P-channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for applications such as level-shifted high side switches, PWM applications, load switching, power management in portable/desktop PCs, and DC/DC conversion. Its design provides a high-density cell structure for low RDS(on), fast switching capabilities, and is avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Model: ESJ2303
- Package: SOT-23
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Reel Size: 7 inches
- Packing: Tape & Reel
- Quantity per reel: 3,000 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -1.5 | A | ||
| Continuous Drain Current | ID | TA=100C | -1.0 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 0.8 | W | ||
| Pulsed Drain Current | IDM | -6.0 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | 156 | C/W | |||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.2 | -1.75 | -2.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.5A | 155 | 178 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-1.0A | 265 | 310 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 95 | pF | ||
| Output Capacitance | COSS | 16 | ||||
| Reverse Transfer Capacitance | CRSS | 13 | ||||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-2A | 1.6 | nC | ||
| Gate-to-Source Charge | QGS | 0.4 | ||||
| Gate-to-Drain Charge | QGD | 0.47 | ||||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-1A, RG=3 | 9 | ns | ||
| Rise Time | tr | 20 | ||||
| Turn-Off Delay Time | td(OFF) | 45 | ||||
| Fall Time | tf | 40 | ||||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-1A | -0.45 | -1.5 | V | |
2504101957_ElecSuper-ESJ2303_C42420763.pdf
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