P channel MOSFET FETek FKS6115 60V fast switching device with high reliability and low gate charge
Key Attributes
Model Number:
FKS6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
11A
RDS(on):
25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF
Output Capacitance(Coss):
224pF
Input Capacitance(Ciss):
3.635nF
Pd - Power Dissipation:
5.2W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
FKS6115
Package:
SOP-8
Product Description
Product Overview
The FKS6115 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: FETek Technology Corp.
- Product Series: FKS6115
- Type: P-Ch MOSFET
- Voltage Rating: 60V
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V | -11 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V | -8.5 | A | |||
| IDM | Pulsed Drain Current | -22 | A | |||
| EAS | Single Pulse Avalanche Energy | 113 | mJ | |||
| IAS | Avalanche Current | 47.6 | A | |||
| PD@TC=25 | Total Power Dissipation | 5.2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 24 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-10A | --- | 25 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-8A | --- | 33 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-10A | 25 | --- | nC | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | --- | pF | |
| Coss | Output Capacitance | VDS=-15V , VGS=0V , f=1MHz | 224 | --- | pF | |
| Crss | Reverse Transfer Capacitance | VDS=-15V , VGS=0V , f=1MHz | 141 | --- | pF | |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | -11 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V |
2411220546_FETek-FKS6115_C2758596.pdf
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