ElecSuper SI2304DDS T1 BE3 ES N Channel MOSFET designed for low RDS ON and DC DC conversion circuits
Key Attributes
Model Number:
SI2304DDS-T1-BE3(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
21mΩ@10V;25mΩ@4.5V;33mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Output Capacitance(Coss):
62pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
SI2304DDS-T1-BE3(ES)
Package:
SOT-23-3L
Product Description
Product Overview
The SI2304DDS-T1-BE3(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering excellent performance and reliability.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Model: SI2304DDS-T1-BE3(ES)
- Package: SOT-23-3L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70°C | 4.6 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 0.9 | W | ||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 1.0 | 1.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5.8A | 21.0 | 28.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5.0A | 25.0 | 33.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=4.0A | 33.0 | 52.0 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5.8A | 7.8 | 15 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 550 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 48 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5.8A | 6.7 | nC | ||
| Threshold Gate Charge | QG(TH) | VGS=4.5V, VDS=10V, ID=5.8A | 0.75 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5.8A | 1.65 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5.8A | 1.78 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 3.8 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 13.0 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 14.2 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 2.0 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | |
2504101957_ElecSuper-SI2304DDS-T1-BE3-ES_C42412337.pdf
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