Low Gate Charge N Channel MOSFET ElecSuper ESE6005AS Designed for DC DC Conversion and Power Switching
Key Attributes
Model Number:
ESE6005AS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
30mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
50pF@25V
Input Capacitance(Ciss):
1.15nF@25V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
ESE6005AS
Package:
SOP-8
Product Description
Product Overview
The ESE6005AS is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: China (implied by www.elecsuper.com and typical manufacturing locations for such components)
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 5 | A | ||
| Continuous Drain Current | ID | TA=100°C | 3.3 | A | ||
| Maximum Power Dissipation | PD | 2 | W | |||
| Pulsed Drain Current | IDM | 20 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 11.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 33 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 62.5 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5A | 30 | 40 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 36 | 50 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1150 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 59 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 50 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=2.5A | 21 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=2.5A | 4 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=2.5A | 5.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 8 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 15 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 25 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=5A | 1.5 | V | ||
2504101957_ElecSuper-ESE6005AS_C42420768.pdf
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