Compact SOT 23 Package N Channel Trench Power MOSFET FM 2302M for Effective Power Switching Solutions

Key Attributes
Model Number: 2302M
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
86mΩ@2.5V,2.0A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
23pF
Pd - Power Dissipation:
690mW
Input Capacitance(Ciss):
192pF
Gate Charge(Qg):
3.3nC@4.5V
Mfr. Part #:
2302M
Package:
SOT-23
Product Description

Product Overview

The 2302M is an N-Channel Trench Power MOSFET designed for high performance and current handling. It utilizes Trench Power LV MOSFET technology, making it suitable for applications requiring efficient power management and switching capabilities.

Product Attributes

  • Brand: Superchip
  • Model: 2302M
  • Part Number: S&CIC2462
  • Technology: N-Channel Trench Power LV MOSFET
  • Package: SOT-23

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Absolute Maximum RatingsVDS20V
VGS±12V
IDTA=25°C @ Steady State3.0A
IDTA=70°C @ Steady State2.0A
IDMPulsed Drain Current10.8A
Thermal CharacteristicsPD@ TA=25°C0.69W
RθJAJunction-to-Ambient @ Steady State172°C/W
Electrical CharacteristicsBVDSSVGS= 0V, ID=250μA20V
IDSSVDS=20V,VGS=0V1μA
IGSSVGS= ±12V, VDS=0V±100nA
VGS(th)VDS= VGS, ID=250μA0.450.701.0V
RDS(ON)VGS= 4.5V, ID=2.5A5264
RDS(ON)VGS= 2.5V, ID=2.0A7086
VSDIS=2.5A,VGS=0V1.2V
Dynamic ParametersCissVDS=10V,VGS=0V,f=1MHZ192pF
Coss23pF
Crss26pF
QgVGS=4.5V,VDS=10V,ID=2.5 A3.3nC
Switching ParameterstD(on)VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω7.9ns
tr54ns
tD(off)17ns
tf50ns

2410121956_FM-2302M_C19190096.pdf

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