N Channel Enhancement Mode MOSFET ElecSuper SI2306 ES Ideal for Power Switching and Charging Circuits
Key Attributes
Model Number:
SI2306-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.3A
RDS(on):
34mΩ@10V;50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.1nC@10V
Mfr. Part #:
SI2306-ES
Package:
SOT-23
Product Description
Product Overview
The SI2306-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: SI2306-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 4.3 | A | ||
| Continuous Drain Current | ID | TA=75°C | 3.3 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Pulsed Drain Current | IDM | 17.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤ 10s) | 90 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.4 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3.6A | 34 | 43 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2.8A | 50 | 70 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=3.6A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 170 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 35 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 25 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=3.6A | 4.1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=3.6A | 0.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=3.6A | 1 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=2.2Ω, RG=3Ω | 4.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=2.2Ω, RG=3Ω | 1.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=2.2Ω, RG=3Ω | 18.5 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=2.2Ω, RG=3Ω | 15.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=3.6A | 1.5 | V | ||
2504101957_ElecSuper-SI2306-ES_C22379631.pdf
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