Power Switch Component ElecSuper PMV250EPEAR ES P Channel Enhancement MOSFET for Charging Circuits
Key Attributes
Model Number:
PMV250EPEAR(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
1A
RDS(on):
273mΩ@10V;380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
91pF
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
1.5nC@10V
Mfr. Part #:
PMV250EPEAR(ES)
Package:
SOT-23
Product Description
Product Overview
The PMV250EPEAR(ES) is a P-Channel enhancement MOS Field Effect Transistor featuring advanced trench technology for excellent RDS(ON) and low gate charge. Its high density cell design and rugged construction make it suitable for DC-DC conversion, power switch, and charging circuits, as well as PWM applications and load switching in portable and desktop PCs.
Product Attributes
- Brand: ElecSuper
- Model: PMV250EPEAR(ES)
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25C | -1.0 | A | ||
| TA=100C | -0.65 | A | ||||
| Maximum Power Dissipation | PD | 0.8 | W | |||
| Pulsed Drain Current | IDM | -4 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | to +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.2 | -1.8 | -2.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.0A | 273 | 320 | mΩ | |
| VGS=-4.5A, ID=-0.8A | 380 | 448 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 91 | pF | ||
| Output Capacitance | COSS | 11 | pF | |||
| Reverse Transfer Capacitance | CRSS | 9 | pF | |||
| Total Gate Charge | QG | VGS=-10V, VDS=-15V ID=-2A | 1.5 | nC | ||
| Gate-to-Source Charge | QGS | 0.4 | nC | |||
| Gate-to-Drain Charge | QGD | 0.45 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V ID=-1A, RG=3Ω | 8.8 | ns | ||
| Rise Time | tr | 20 | ns | |||
| Turn-Off Delay Time | td(OFF) | 44 | ns | |||
| Fall Time | tf | 38 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=-1A | -1.5 | V | ||
2504101957_ElecSuper-PMV250EPEAR-ES_C42412923.pdf
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