Low RDS ON 20V N channel MOSFET FM 2080K designed for PWM load switch and general power management
Key Attributes
Model Number:
2080K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
356pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
88W
Input Capacitance(Ciss):
2.56nF@10V
Gate Charge(Qg):
38nC@4.5V
Mfr. Part #:
2080K
Package:
TO-252-2
Product Description
Product Overview
The 2080K is a 20V N-channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for load switch, PWM applications, power management, and general-purpose uses. Key features include extremely low RDS(on), good stability and uniformity, 100% avalanche testing, and an excellent package for heat dissipation.
Product Attributes
- Brand: FINE MADE MICROELECTRONICS GROUP CO., LTD. (Superchip)
- Model: 2080K
- File No.: S&CIC2028
- Voltage: 20V
- Channel Type: N-channel enhancement mode
- Package: TO-252 (DPAK)
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | 20 | V | ||
| VGS | Gate-Source Voltage | ±12 | V | ||
| ID | Continuous Drain Current (TC = 25) | 80 | A | ||
| ID | Continuous Drain Current (TC = 100) | 58 | A | ||
| IDM | Pulsed Drain Current (note1) | 240 | A | ||
| EAS | Single Pulsed Avalanche Energy (note2) | 196 | mJ | ||
| PD | Power Dissipation (TC = 25) | 88 | W | ||
| PD | Derate above 25 | 0.54 | W/ | ||
| RJC | Thermal Resistance, Junction to Case | 1.85 | /W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | ||
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) | 20 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS = 24 V, VGS = 0 V) | 1 | A | ||
| IGSSF | Gate Leakage Current, Forward (VGS = 12 V, VDS = 0 V) | 100 | nA | ||
| IGSSR | Gate Leakage Current, Reverse (VGS = -12 V, VDS = 0 V) | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS,ID=250A) | 0.4 | 0.8 | 1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance (VGS=4.5V, ID=30A) | 3.4 | 4.5 | m | |
| RDS(ON) | Drain-Source On-State Resistance (VGS=2.5V, ID=20A) | 4.2 | 6.0 | m | |
| Dynamic Characteristics | |||||
| Ciss | Input Capacitance (VDS=10V,VGS=0V, f=1.0MHz) | 2560 | pF | ||
| Coss | Output Capacitance | 368 | pF | ||
| Crss | Reverse Transfer Capacitance | 356 | pF | ||
| td(on) | Turn-on Delay Time (VDS =10V, ID =30A, VGS =4.5V, RG =1.8) | 7.8 | nS | ||
| tr | Turn-on Rise Time | 30 | nS | ||
| td(off) | Turn-Off Delay Time | 50 | nS | ||
| tf | Turn-Off Fall Time | 42 | nS | ||
| Qg | Total Gate Charge (VDS =10V, ID =30A, VGS =4.5V) | 38 | nC | ||
| Qgs | Gate-Source Charge | 2.9 | nC | ||
| Qgd | Gate-Drain Charge | 15 | nC | ||
| Source-Drain Diode Characteristics | |||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 80 | A | ||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 240 | A | ||
| VSD | Diode Forward Voltage (VGS= 0 V, IS = 30 A) | 1.2 | V | ||
| Trr | Reverse recovery time (IF=30A, di/dt=100A/S) | 18 | ns | ||
| Qrr | Reverse recovery charge | 8 | nC | ||
2410121830_FM-2080K_C2932010.pdf
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