P Channel Enhancement Mode MOSFET FM 3401L Featuring Low On Resistance and High Density Cell Design
Key Attributes
Model Number:
3401L
Product Custom Attributes
Drain To Source Voltage:
18V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
78mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53.18pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
826.18pF@15V
Gate Charge(Qg):
8.27nC@4.5V
Mfr. Part #:
3401L
Package:
SOT-23
Product Description
Product Overview
The 3401L is a P-channel enhancement mode MOSFET from SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. It features advanced processing technology, extremely low on-resistance, and high-density cell design, making it suitable for various electronic applications requiring efficient power switching.
Product Attributes
- Brand: SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.
- Product Code: 3401L
- Document Number: S&CIC1274
- Origin: China
- Type: P-Channel Enhancement Mode MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -1.0A | -- | 40.0 | 55.0 | m |
| RDS(on) | VGS = -2.5V, ID = -0.5A | -- | 55.0 | 78.0 | m | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250uA | -0.4 | -0.7 | -1.0 | V |
| Drain Current | IDSS | VDS = -12V, VGS = 0V | -- | -- | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 12V | -- | -- | 100 | nA |
| Total Gate Charge | Qg | VDS = -15V, ID = -4A, VGS = -4.5V | -- | 6.36 | 8.27 | nC |
| Gate-Source Charge | Qgs | -- | -- | 1.79 | 2.33 | -- |
| Gate-Drain Charge | Qgd | -- | -- | 1.42 | 1.85 | -- |
| Switching Times | td(on) | VDD = -15V, RL = 3.6, ID = -1A, VGEN = -10V, RG = 6 | -- | 11.36 | 22.72 | ns |
| tr | -- | -- | 2.32 | 4.64 | -- | |
| td(off) | -- | -- | 34.88 | 69.76 | -- | |
| tf | -- | -- | 3.52 | 7.04 | -- | |
| Capacitance | Ciss | VDS = -15V, VGS = 0V, f=1.0MHz | -- | 826.18 | -- | pF |
| Coss | -- | -- | 90.74 | -- | -- | |
| Crss | -- | -- | 53.18 | -- | -- | |
| Diode Forward Current | IS | -- | -- | -- | -2.2 | A |
| Diode Forward Voltage | VSD | IS = -1.0A, VGS = 0V | -- | -- | -1 | V |
| Drain-Source Voltage | VDS | -- | -- | -- | -18 | V |
| Continuous Drain Current | ID | -- | -- | -- | -3.5 | A |
| Pulsed Drain Current | IDM | -- | -- | -- | -20 | -- |
| Maximum Power Dissipation | PD | TA=25 | -- | -- | 1.4 | W |
| PD | TA=75 | -- | -- | 1 | W | |
| Junction and Storage Temperature Range | TJ, Tstg | -- | -55 | -- | 150 | |
| Junction to Ambient Thermal Resistance (PCB mounted) | RJA | -- | -- | 140 | -- | /W |
2411121101_FM-3401L_C2932003.pdf
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