Power Switch N Channel MOSFET ElecSuper ESP10N10C with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
ESP10N10C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4.5A
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
3.1W
Mfr. Part #:
ESP10N10C
Package:
SOP-8
Product Description
Product Overview
The ESP10N10C is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | BVDSS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TA=25°C) | ID | 4.5 | A | |
| Continuous Drain Current (TA=100°C) | ID | 3.0 | A | |
| Maximum Power Dissipation | PD | 3.1 | W | |
| Pulsed Drain Current | IDM | 18 | A | |
| Avalanche Current, Single Pulsed | IAS | 9 | A | a |
| Avalanche Energy, Single Pulsed | EAS | 12 | mJ | a |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W | Single Operation |
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA (Typ: 1.7) |
| Drain-to-source On-resistance (VGS=10V) | RDS(on) | 120 - 150 | mΩ | ID=4A (Typ: 120) |
| Drain-to-source On-resistance (VGS=4.5V) | RDS(on) | 130 - 180 | mΩ | ID=3A (Typ: 130) |
| Input Capacitance | CISS | 650 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 30 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 25 | pF | VGS=0V, f=1MHz, VDS=25V |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=4A |
2504101957_ElecSuper-ESP10N10C_C42412243.pdf
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