Low RDS ON P Channel MOSFET ElecSuper SI2319 ES ideal for charging and power switching applications
Key Attributes
Model Number:
SI2319(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
111mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
37pF
Input Capacitance(Ciss):
316pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
SI2319(ES)
Package:
SOT-23
Product Description
Product Overview
The SI2319(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it ideal for DC-DC conversion, power switching, and charging circuits. Its high-density cell design ensures low RDS(on), while features like fast switching, avalanche rating, and low leakage current contribute to its reliability and ruggedness.
Product Attributes
- Brand: ElecSuper
- Part Number: SI2319(ES)
- Package: SOT-23
- Marking: 0464A
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Reel Size: 7 inches
- Quantity per reel: 3,000 PCS
- Pb-free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -3.0 | A | ||
| Continuous Drain Current | ID | TA=100C | -1.9 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Pulsed Drain Current | IDM | -12.0 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 95 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.2A | 65 | 85 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-1A | 88 | 111 | m | |
| Input Capacitance | CISS | VGS=0V, VDS =-20V, f=1MHz | 316 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V, f=1MHz | 37 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V, f=1MHz | 31 | pF | ||
| Total Gate Charge | QG | VGS=0 to -10V, VDS=-20V, ID =-1.2A | 8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -10V, VDS=-20V, ID =-1.2A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to -10V, VDS=-20V, ID =-1.2A | 1.7 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-20V, ID=-1.2A, RG=6 | 6 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-20V, ID=-1.2A, RG=6 | 5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-20V, ID=-1.2A, RG=6 | 26 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-20V, ID=-1.2A, RG=6 | 15 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.5A | -1.2 | V | ||
2504101957_ElecSuper-SI2319-ES_C42434110.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
