power switching ElecSuper RUM001L02T2CL ES N Channel MOSFET featuring low gate charge and resistance
Key Attributes
Model Number:
RUM001L02T2CL(ES)
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
900mA
RDS(on):
150mΩ@4.5V;200mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
22pF
Input Capacitance(Ciss):
60pF
Pd - Power Dissipation:
230mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
RUM001L02T2CL(ES)
Package:
SOT-723
Product Description
Product Overview
The RUM001L02T2CL(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: RUM001L02T2CL(ES)
- Package: SOT-723
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.65 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 150 | 165 | m | |
| VGS=2.5V, ID=0.3A | 200 | 300 | m | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 60 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 22 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 12 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.9A | 1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.9A | 0.28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.9A | 0.22 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 2 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 23 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=0.9A | 1.5 | V | ||
| ABSOLUTE MAXIMUM RATING & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 0.9 | A | ||
| TA=100C | 0.6 | A | ||||
| Maximum Power Dissipation | PD | 0.23 | W | |||
| Pulsed Drain Current | IDM | 3.6 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 543 | C/W | ||
2504101957_ElecSuper-RUM001L02T2CL-ES_C42412321.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
