High current axial lead rectifier FMS Formosa Microsemi SR1150 suitable for various power electronics
Key Attributes
Model Number:
SR1150
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@150V
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
900mV@1A
Current - Rectified:
1A
Mfr. Part #:
SR1150
Package:
DO-41
Product Description
Axial Leaded Rectifier Schottky Barrier SR120 THRU SR1200
High-efficiency axial lead Schottky barrier rectifiers designed for through-hole mounting. These devices offer low power loss, high current capability, low forward voltage drop, and excellent surge capability, making them suitable for various power applications. Features include guardring for overvoltage protection and ultra-high-speed switching.
Product Attributes
- Brand: Formosa MS
- Origin: Taiwan (implied by TEL/FAX numbers and company name)
- Material: Silicon epitaxial planar chip, metal silicon junction; Epoxy UL94-V0 rated flame retardant
- Certifications: MIL-STD-19500/228 (Lead-free parts)
- Suffix "-H" indicates Halogen free parts.
Technical Specifications
| Parameter | Symbol | SR120 | SR130 | SR140 | SR150 | SR160 | SR180 | SR1100 | SR1150 | SR1200 | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V | |
| RMS voltage | VRMS | 14 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 | V | |
| Continuous reverse voltage | VR | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 | V | |
| Maximum forward voltage | VF | 0.55 | 0.70 | 0.85 | 0.90 | 0.95 | V | IF=1.0A, TJ=100C | ||||
| Forward rectified current | IO | 1.0 | A | TC=25C | ||||||||
| Forward surge current | IFSM | 30 | A | 8.3ms single half sine-wave (JEDEC methode) | ||||||||
| Reverse current | IR | 0.5 | mA | VR=20V, TJ=25C | ||||||||
| Thermal resistance Junction to ambient | RJA | 110 | C/W | Vertical P.C.B. mounted, with 1.5 X1.5"(38X38mm)copper pads | ||||||||
| Thermal resistance Junction to lead | RJL | 10 | C/W | |||||||||
| Diode junction capacitance | CJ | 15 | pF | f=1MHz and applied 4V DC reverse voltage | ||||||||
| Operating temperature | TJ | -65 to +150 | C | |||||||||
| Storage temperature | TSTG | -55 to +175 | C |
Package Outline
DO-41
Dimensions in inches and (millimeters)
2410121501_FMS-Formosa-Microsemi-SR1150_C216111.pdf
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