High Current N Channel MOSFET ElecSuper ESN4838 with Low Gate Charge and Excellent RDS ON Performance
Key Attributes
Model Number:
ESN4838
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
33A
RDS(on):
12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
110pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
1.88W
Input Capacitance(Ciss):
1.08nF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
ESN4838
Package:
PDFN3x3-8L
Product Description
The ESN4838 is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen-free.
- Brand: ElecSuper
- Product Series: SuperMOS
- Model: ESN4838
- Material: Halogen free
- Certifications: UL 94V-0
- Package: PDFN3*3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C, VGS=10V | 33 | A | ||
| Continuous Drain Current | ID | TC=75°C, VGS=10V | 25 | A | ||
| Pulsed Drain Current | IDM | 132 | A | |||
| Avalanche Current Single Pulse | IAS | a | 18 | A | ||
| Avalanche Energy Single Pulse | EAS | a | 48.6 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| THERMAL CHARACTERISTICS | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 32 | 40 | °C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 4.2 | 6 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 7.5 | 12 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 12 | 18 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1080 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 180 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 110 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=20A | 18 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=20A | 3.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=20A | 3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | 6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | 3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | 22 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.35Ω, RG=6Ω | 5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 0.45 | 1.5 | V | |
2411220030_ElecSuper-ESN4838_C5350984.pdf
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