ElecSuper SI2319DS-T1-GE3 ES P Channel MOSFET featuring trench technology and low gate charge for power
Key Attributes
Model Number:
SI2319DS-T1-GE3(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
2.3A
RDS(on):
110mΩ@10V;150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Output Capacitance(Coss):
27pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
230pF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SI2319DS-T1-GE3(ES)
Package:
SOT-23
Product Description
Product Overview
The SI2319DS-T1-GE3(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is reliable, rugged, avalanche rated, and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: SI2319DS-T1-GE3(ES)
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25C | -2.3 | A | ||
| Continuous Drain Current | ID | TA=100C | -1.5 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | -9.5 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.2 | -1.8 | -2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-2A | 110 | 130 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5A, ID=-1A | 150 | 175 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 230 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V f=1MHz | 27 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V f=1MHz | 21 | pF | ||
| Total Gate Charge | QG | VGS=-10V, VDS=-20V ID=-1A | 12 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V ID=-1A | 2.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V ID=-1A | 3.8 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-20V ID=-1A, RG=6Ω | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-20V ID=-1A, RG=6Ω | 13 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-20V ID=-1A, RG=6Ω | 25 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-20V ID=-1A, RG=6Ω | 12 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-2A | -0.45 | -1.5 | V | |
2412131800_ElecSuper-SI2319DS-T1-GE3-ES_C42412240.pdf
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