ElecSuper BSS8402DW ES P Channel MOSFET Ideal for Charging Circuits Power Switch and DC DC Conversion

Key Attributes
Model Number: BSS8402DW(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V;4.5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
230mW
Input Capacitance(Ciss):
17pF
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS8402DW(ES)
Package:
SOT-363
Product Description

Product Overview

The BSS8402DW(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and halogen-free.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
OFF CHARACTERISTICSBVDSSVGS=0V, ID=-250uA-60V
IDSSVGS=0V, VDS=-60V-100nA
IGSSVGS=20V, VDS=0V10uA
ON CHARACTERISTICSVGS(TH)VGS=VDS, ID=-250uA-1.1-1.6-2.2V
RDS(on)VGS=-10V, ID=-0.15A3.55.2
RDS(on)VGS=-4.5V, ID=-0.1A4.56.3
CHARGES AND CAPACITANCESCISSVGS=0V, VDS =-25V f=1MHz17pF
COSS4pF
CRSS1.6pF
TOTAL GATE CHARGEQG(TOT)VGS=-10V, VDS=-25V ID=-0.15A1.1nC
QGS0.3nC
QGD0.2nC
SWITCHING CHARACTERISTICStd(ON)VGS=-10V, VDS=-25V ID=-0.15A, RG=64.8ns
tr19ns
td(OFF)52ns
tf32ns
BODY DIODE CHARACTERISTICSVSDVGS=0V, ISD=-0.15A-0.45-0.88-1.5V

2412230931_ElecSuper-BSS8402DW-ES_C42379949.pdf

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