Surface Mount Schottky Barrier Rectifier FMS Formosa Microsemi FM540S-AL with 5 Ampere Current Rating
Key Attributes
Model Number:
FM540S-AL
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@40V
Non-Repetitive Peak Forward Surge Current:
80A
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@5A
Current - Rectified:
5A
Mfr. Part #:
FM540S-AL
Package:
SMA-L
Product Description
Product Overview
The FM540S-AL is a 5.0A Surface Mount Schottky Barrier Rectifier featuring a batch process design for excellent power dissipation, leading to better reverse leakage current and thermal resistance. Its low profile surface mount design optimizes board space, while offering high current capability and a low forward voltage drop. The device includes a guardring for overvoltage protection and ultra-high-speed switching. It is constructed with a silicon epitaxial planar chip and a metal silicon junction.
Product Attributes
- Brand: Formosa MS
- Origin: China (implied by contact info)
- Material: Epoxy:UL94-V0 rated flame retardant, Case: Molded plastic, Terminals: Solder plated
- Certifications: Solderable per MIL-STD-750, Method 2026, Lead-free parts meet environmental standards of MIL-STD-19500 /228, Suffix "-H" indicates Halogen free parts
- Color: Not specified
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VR (V) | VF (V) @ IF | IO (A) | IFSM (A) | IR (mA) @ VR=40V | RJA (OC/W) | CJ (pF) @ f=1MHz, VR=4V | TSTG (OC) | TJ (OC) | Package | Marking Code |
| FM540S-AL | 40 | 28 | 40 | 0.5@IF=3A, 0.55@IF=5A | 5.0 | 80 (8.3ms single half sine-wave) | 0.5 (TYP.) | 250 (Junction to ambient) | 20 (TYP.) | -55 to +150 | -55 to +125 | DO-214AC / SMA-L | S54 |
2410121509_FMS-Formosa-Microsemi-FM540S-AL_C163772.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
