Durable P Channel MOSFET ElecSuper BSS84DW 7 F ES designed for DC DC conversion and charging circuits
Key Attributes
Model Number:
BSS84DW-7-F(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
230mW
Input Capacitance(Ciss):
17pF
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS84DW-7-F(ES)
Package:
SOT-363
Product Description
Product Overview
The BSS84DW-7-F(ES) is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, designed with advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high density cell design, and a reliable, rugged construction. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: BSS84DW-7-F(ES)
- Package: SOT-363
- Material: Halogen free
- Certifications: UL 94V-0
- Packing: Tape & Reel (3,000 PCS per reel)
- Reel Size: 7 inches
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.16 | A | ||
| Continuous Drain Current | ID | TA=100°C | -0.10 | A | ||
| Maximum Power Dissipation | PD | 0.23 | W | |||
| Pulsed Drain Current | IDM | -0.65 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 543 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-0.15A | 3.5 | 5.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.1A | 4.5 | 6.3 | Ω | |
| Input Capacitance | CISS | VGS=0V, VDS =-25V f=1MHz | 17 | pF | ||
| Output Capacitance | COSS | 4 | pF | |||
| Reverse Transfer Capacitance | CRSS | 1.6 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-25V ID=-0.15A | 1.1 | nC | ||
| Gate-to-Source Charge | QGS | 0.3 | nC | |||
| Gate-to-Drain Charge | QGD | 0.2 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-25V ID=-0.15A, RG=6Ω | 4.8 | ns | ||
| Rise Time | tr | 19 | ns | |||
| Turn-Off Delay Time | td(OFF) | 52 | ns | |||
| Fall Time | tf | 32 | ns | |||
| Forward Voltage | VSD | VGS=0V, ISD=-0.15A | -0.45 | -1.5 | V | |
2412230931_ElecSuper-BSS84DW-7-F-ES_C42379944.pdf
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