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quality N Channel Enhancement Mode MOSFET ElecSuper SI2304DDS-T1-GE3 ES with Low RDS ON and High Reliability factory
quality N Channel Enhancement Mode MOSFET ElecSuper SI2304DDS-T1-GE3 ES with Low RDS ON and High Reliability factory

N Channel Enhancement Mode MOSFET ElecSuper SI2304DDS-T1-GE3 ES with Low RDS ON and High Reliability

Key Attributes
Model Number: SI2304DDS-T1-GE3(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Output Capacitance(Coss):
62pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
SI2304DDS-T1-GE3(ES)
Package:
SOT-23
Product Description

Product Description

The SI2304DDS-T1-GE3(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, reliability, and ruggedness. This standard product is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Model: SI2304DDS-T1-GE3(ES)
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: Incorporated

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage BVDSS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID TA=25°C 5.8 A
Continuous Drain Current ID TA=70°C 4.6 A
Maximum Power Dissipation PD TA=25°C 1.4 W
Maximum Power Dissipation PD TA=70°C 0.9 W
Pulsed Drain Current IDM 30 A
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 150 °C
Thermal Resistance
Junction-to-Ambient Thermal Resistance RθJA t ≤ 10 s 75 90 °C/W
Junction-to-Case Thermal Resistance RθJC Steady State 43 70 °C/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA
Gate-to-source Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250uA 0.6 1.0 1.3 V
Drain-to-source On-resistance RDS(on) VGS=10V, ID=5.8A 21.0 28.0 mΩ
Drain-to-source On-resistance RDS(on) VGS=4.5V, ID=5.0A 25.0 33.0 mΩ
Drain-to-source On-resistance RDS(on) VGS=2.5V, ID=3.0A 33.0 51.0 mΩ
Forward Transconductance gFS VDS=5.0V, ID=5.8A 7.8 15 S
Input Capacitance CISS VGS=0V, f=1MHz, VDS=10V 550 pF
Output Capacitance COSS VGS=0V, f=1MHz, VDS=10V 62 pF
Reverse Transfer Capacitance CRSS VGS=0V, f=1MHz, VDS=10V 48 pF
Total Gate Charge QG(TOT) VGS=4.5V, VDS=10V, ID=5.8A 6.7 nC
Threshold Gate Charge QG(TH) VGS=4.5V, VDS=10V, ID=5.8A 0.75 nC
Gate-to-Source Charge QGS VGS=4.5V, VDS=10V, ID=5.8A 1.65 nC
Gate-to-Drain Charge QGD VGS=4.5V, VDS=10V, ID=5.8A 1.78 nC
Turn-On Delay Time td(ON) VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 3.8 ns
Rise Time tr VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 13.0 ns
Turn-Off Delay Time td(OFF) VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 14.2 ns
Fall Time tf VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω 2.0 ns
Forward Voltage VSD VGS=0V, IS=1.0A 0.75 1.5 V

2504101957_ElecSuper-SI2304DDS-T1-GE3-ES_C42412336.pdf

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